Process for producing layered member and layered member

ABSTRACT

The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member  1   a  is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer  10  where the direction from the first surface  101  to the second surface  102  is the negative c polar direction of the crystal, an adhesive layer  12  formed along the first surface  101  of the nitride semiconductor crystal layer  10,  and a glass substrate  14  which is adhesively fixed to the adhesive layer  12  such that the adhesive layer  12  is located between the glass substrate  14  and the nitride semiconductor crystal layer  10.

TECHNICAL FIELD

The present invention relates to a layered member and a manufacturingmethod for a layered member comprising a layer formed by a nitride typesemiconductor material.

BACKGROUND ART

An example of a layered member comprising a layer formed by a nitridetype semiconductor material is a photoelectric surface comprising a GaNlayer as an active layer (for instance, see cited patent 1).

Cited patent 1: Japanese Patent Application Laid-open No. H10-241554.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

With a conventional photoelectric surface, the quantum efficiency whenan excited photoelectron is emitted by light entering a nitridesemiconductor crystalline layer as a light absorbing layer has beenincreasing, but even higher quantum efficiency and lower cost are beingdemanded for photoelectric surfaces.

An object of the present invention is to provide a layered member and amanufacturing method for a layered member which can further increasequantum efficiency and achieved lower costs.

Means for Solving the Problems

In order to achieve the aforementioned object, the present inventorshave performed evaluations from many aspects. For material costs andproductivity, sapphire substrates have a high material cost, and anextremely long time is required when mechanically processing so theprice becomes even higher. In contrast, silicon substrates with highquality are supplied at low cost in large sheets. Furthermore, using aglass bonding method, the productivity of the photoelectric surfaceprocess is excellent compared to sapphire substrates. Recently, themarket has been demanding lower prices as well as demanding higherperformance. From this point of view, there is demand to satisfy both ofthese requirements. Therefore the present inventors first focusedattention to the polarization of nitride type semiconductor materials.Nitride type semiconductor materials have material specific polarizationproperties which include spontaneous polarization along the c axis ofthe crystal and piezo polarization. To illustrate, if these polarizationproperties are used in a photoelectric surface such as a photoelectronmultiplier tube or the like, the positive charge will increase above thesurface level because of polarization, and therefore strong band bendingwill occur at the surface. Therefore the quantum efficiency of theactive layer is increased by utilizing the surface emission of thephotoelectrons. Furthermore, by widening the depleted layer, a built-infield and active layer will be formed and the diffusion length will beextended.

However, in order to utilize this polarization, the topmost layer of thephotoelectric surface must be a −c surface (surface in the negative cpolar direction, N surface direction) and a very smooth surface must beachieved. However, with the MOCVD growth method used for normal sapphiresubstrates (surface orientation of main surface is (0001)c), the +cplane (plane in the positive c polar direction, plane in the Group IIIelement surface direction) will be the growth direction. With thiscrystal growth method, the growth of the −c surface is difficult tocontrol and a highly smooth surface can not be obtained.

As a result of further investigations into this point by the presentinventors, the following finding was made. Namely, when a wafer isobtained using this crystal growth method, the surface on the oppositeside of the +c polar direction (hereinafter, +c surface) is the −c polardirection surface (hereinafter, −c surface). Furthermore, it wasdiscovered that the plane orientation of the crystal growth substrateused to grow the nitride type semiconductor material also has an effectof achieving a smooth surface. The present invention was achieved basedon these findings.

The manufacturing method of the layered member of the present inventioncomprises the steps of: preparing a substrate for crystal growth whichis a crystalline substance with the main surface in the (111) planeorientation; forming a buffer layer along the main surface of thesubstrate for crystal growth; forming a nitride semiconductor crystallayer on the buffer layer by crystal growth in the Group III elementsurface (positive c polar) direction using a nitride type semiconductormaterial; forming an adhesive layer on the nitride semiconductor crystallayer; adhesively fixing the substrates onto the adhesive layer; andremoving the substrate for crystal growth to obtain the buffer layerwith a negative c polar surface.

With the layered member manufacturing method of the present invention,the plane orientation is (111) for the main surface of the substrate forcrystal growth which forms a nitride semiconductor crystal layer bycrystal growth through a buffer layer, so the surface of the substrateside for growing crystals of the nitride type semiconductor material canbe the −c layer. Furthermore, the substrate for growing crystals isremoved after the nitride semiconductor crystal layer and the substrateare adhesively fixed together by an adhesive layer so the −c surface ofthe buffer layer can be the topmost surface layer.

Furthermore, the layered member manufacturing method of the presentinvention preferably further comprises, after the step of removing thesubstrate for crystal growth, a step of removing the buffer layer toobtain a nitride semiconductor crystal layer which has a negative cpolar surface. The buffer layer is removed, so the −c layer of thenitride semiconductor crystal layer can be the topmost surface layer.

Furthermore, the layered member manufacturing method of the presentinvention preferably further comprises, after the step of removing thesubstrate for crystal growth, a step of causing crystal growth of thesemiconductor material on the negative c polar surface of the bufferlayer. Crystal growth will occur on the negative c polar surface sofavorable crystal growth is possible.

Furthermore, the layered member manufacturing method of the presentinvention preferably further comprises, after the step of removing thebuffer layer, a step of causing crystal growth of the semiconductormaterial on the negative c polar surface of the nitride semiconductorcrystal layer. Crystal growth will occur on the negative c polar surfaceso favorable crystal growth is possible.

Furthermore, the layered member manufacturing method of the presentinvention preferably further comprises, prior to the step of removingthe substrate for crystal growth, a step of forming a protective layerwhich covers at least the periphery of the substrate. The periphery ofthe substrate will be covered by a protective layer, and therefore, whenremoving the buffer layer and the substrate for forming crystals byetching, for instance, erosion of the substrate can be reduced.

The layered member of the present invention is comprising a nitridesemiconductor crystal layer which is a crystalline layer formed by anitride type semiconductor material and in which the direction from thefirst surface thereof to the second surface thereof is the N surface(negative c polar) direction of the crystal; an adhesive layer formedalong the first surface of the nitride semiconductor crystal layer; anda substrate which is adhesively fixed to the adhesive layer such thatthe adhesive layer is located between the substrates and the nitridesemiconductor crystal layer.

With the layered member of the present invention, the direction from thefirst surface to the second surface of the nitride semiconductor crystallayer is the negative c polar direction, so the second surface will bethe −c surface.

Furthermore, with the layered member of the present invention, the firstsurface is an incidence plane where the light enters, the second surfaceis an emission plane which emits the photoelectron, and the substrate isa glass substrate formed to transmit light, and the layered member ispreferably used as a photoelectric surface member which emitsphotoelectrons which have been excited by incident light. The secondsurface is the emission plane, so the emission plane of thephotoelectric surface member can be the −c surface.

With the present invention, a layered member can be produced where thetopmost layer is the −c surface. Therefore, a layered member and amanufacturing method for a layered member which can have even higherquantum efficiency can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

[FIG. 1] FIG. 1 is a diagram for describing the manufacturing method ofa photoelectric surface member which is an embodiment of the presentinvention;

[FIG. 2] FIG. 2 is a diagram for describing the manufacturing method ofa photoelectric surface member which is an embodiment of the presentinvention;

[FIG. 3] FIG. 3 is a diagram for describing the materials used inmanufacturing the photoelectric surface member which is an embodiment ofthe present invention;

[FIG. 4] FIG. 4 is a diagram for describing the effect of thephotoelectric surface member which is an embodiment of the presentinvention; and

[FIG. 5] FIG. 5 shows the energy distribution properties for p type +cand −c GaN.

DESCRIPTION OF THE SYMBOLS

-   1 a—photoelectric surface member, 10—nitride semiconductor crystal    layer, 12—adhesive layer, 14—glass substrate, 16—cathode electrode,    18−Cs—O layer.

BEST MODE FOR CARRYING OUT THE INVENTION

The findings of the present invention can easily be understood byconsidering the following detailed description while referring to theattached drawings which are shown only as examples. Continuing, the bestmode for carrying out the present invention will be described whilereferring to the attached drawings. Where possible, the same code hasbeen attached to the same parts and duplicate descriptions have beenomitted. Furthermore, the scale of the dimensions in the drawings do notnecessarily match that of the descriptions.

The manufacturing method of the photoelectric surface material which isan embodiment of the present invention will be described while referringto FIG. 1A-E and FIG. 2A-E. FIG. 1 A-E and FIG. 2 A-E are cross-sectiondiagrams for describing the manufacturing steps of the photoelectricsurface member.

First, a silicon (111) substrate was prepared as the substrate 50 forcrystal growth (see FIG. 1A). The substrate 50 for crystal growth whichis a silicon (111) substrate is a crystalline material and the surfaceorientation of the main surface 501 is (111). Al_(x)Ga_(1−x)N (0<X≦1) isgrown to approximately several tens of nanometers, and buffer layer 52is formed on the main surface 501 of the silicon (111) substrate 50 (seeFIG. 1B).

A nitride semiconductor crystal layer 10 with a thickness ofapproximately several hundred nanometers is formed on the main surface521 of the buffer layer 52 by epitaxial growth using a Group III-Vnitride semiconductor gas material comprising Ga and N (see FIG. 1C).The nitride semiconductor crystal layer 10 is doped with magnesium to alevel between approximately E19 and E20. As has already been described,the surface orientation of the main surface 501 of the substrate 50 forcrystal growth is (111), so the first surface 101 of the nitridesemiconductor crystal layer 10 is the +c surface, and the second surface102 is the −c surface.

A layer of silicon dioxide was overlaid with a thickness of between 100and 200 nm on to the first surface 101 of the nitride semiconductorcrystal layer 10 using the CVD method to form the adhesive layer 12 (seeFIG. 1D). Next, the glass substrate 14 was prepared. The glass substrate14 preferably has a thermal expansion coefficient similar to the thermalexpansion coefficient of the substrate 50 for crystal growth, andpreferably contains prescribed alkali ion elements. Corning's 9741 andSchott's 8337B are examples of these types of glass substrates 14.

After cleaning the glass substrate 14, the glass substrate 14 and amultilayered sheet with the configuration shown in FIG. 1D (substrate 50for crystal growth, buffer layer 52, nitride semiconductor crystal layer10, and adhesive layer 12 successively overlaid) were rapidly heated tothe glass softening point while the main surface 121 of the adhesivelayer 12 was brought into contact with the glass substrate 14. At thistime, a prescribed loading was applied, and the multilayered sheet andthe glass substrate 14 were thermocompression bonded through theadhesive layer 12 (see FIG. 1E).

In the condition shown in FIG. 1E, at least the glass substrate 14 wascovered by an adhesive Teflon sheet 54 (see FIG. 2A). Next, etching wasperformed at room temperature using (1 HF+1 HNO₃+1 CH₃COOH) as theetchant. The substrate 50 for crystal growth was etched by this etchingprocess, and the etching was stopped by the buffer layer 52 (see FIG.2B). Therefore, the buffer layer 52 acted as the stopping layer.

Next, etching was performed using (1 KOH+10 H₂O+0.01 H₂O₂) as theetchant to remove the buffer layer 52 (see FIG. 2C). Normally, theetching speed of +c surface AlN and GaN is extremely slow, but with thisembodiment, the −c surface side is etched so etching can be performedusing the aforementioned etchants. Note, the timing to complete theetching of the buffer layer 52 is determined by the elapsed time, theconfirmation results of the flatness of the second surface 102 of thenitride semiconductor crystal layer 10, and the transmissivity or thelike of the nitride semiconductor crystal layer 10.

When etching of the buffer layer 52 was complete, the adhesive Teflonsheet 54 was removed. Next, a cathode electrode 16 was formed by thevapor deposition from the glass substrate 14 to the second surface 102of the nitride semiconductor crystal layer 10 (see FIG. 2D). Cr, Al, andNi or the like may be used as the material of the cathode electrode.

Finally, after cleaning the second surface 102 of the nitridesemiconductor crystal layer 10, a Cs—O layer 18 was formed on the secondlayer 102 to obtain a photoelectric surface member 1 a (FIG. 2E). Note,any one or combination of Cs—I, Cs—Te, or Sb—Cs or the like may be usedas a layer containing alkali metal in place of the Cs—O layer 18.

In the aforementioned process, the buffer layer 52 surface obtained byremoving the substrate 50 for crystal growth was a flat −c polarsurface. Using this −c polar surface as a substrate for crystal growth(re-growth substrate), various devices with excellent characteristicswhich use semiconductor materials can be manufactured by growing one ormore layers of high quality semiconductor crystals such asAl_(x)Ga_(1−x)N (0≦X≦1) on the buffer layer 52.

Furthermore, the surface of the nitride semiconductor crystal layer 10obtained after removing the buffer layer 52 has a flat −c polar surface.The aforementioned manufacturing process was described as a process formanufacturing a photoelectric surface, but if this nitride semiconductorcrystal layer 10 is used as a substrate for crystal growth (regrowthsubstrate), various devices with excellent characteristics which usesemiconductor materials can be manufactured by growing one or morelayers of high quality semiconductor crystals such as Al_(x)Ga_(1−x)N(0≦X≦1) or InN or the like.

Note, the materials used for the layers and substrates are notrestricted to those described above. FIG. 3 shows an example of amaterial which enables nitride semiconductor crystal layer 10 +c surfacegrowth and flattening of the nitride semiconductor crystal layer 10second surface 102. In the example shown in FIG. 3, if the material ofthe substrate 50 for crystal growth is silicon and the surfaceorientation is (111), AlN or AlN/GaN superlattice is preferably used asthe buffer layer 52 material, and GaN, AlGaN, or InGaN is preferablyused as the material of the nitride semiconductor crystal layer 10.Furthermore, if the material of the substrate 50 for crystal growth isGaAs and the surface orientation is (111)A, InGaAsN is preferably usedas the material of the buffer layer 52, and GaN, AlGaN, or InGaN ispreferably used as the material for the nitride semiconductor crystallayer 10. Furthermore, if the material of the substrate 50 for crystalgrowth is GaP and the surface orientation is (111)A, InGaPN ispreferably used as the material for the buffer layer 52 and GaN, AlGaN,or InGaN is preferably used as the material for the nitridesemiconductor crystal layer 10. Furthermore, in order to increase thequantum efficiency of the photoelectron surface for any of these cases,a step of forming an electron stopping layer 10 with a larger bandgapafter the step of forming the crystal layer is preferable. This isbecause a potential barrier is formed on the opposite side to the vacuumsurface of the nitride semiconductor crystal layer, and, of thephotoelectrons generated, the photoelectrons moving towards the oppositedirection to the vacuum escape surface direction are repelled to theopposite direction, and therefore photoelectrons move towards the vacuumescape surface direction. The material in this case is preferably AlN,AlGAN, or BGaN.

The effect of this embodiment will be described. With the manufacturingmethod of this embodiment, the surface orientation will be (111) for themain surface 501 of the substrate 50 for crystal growth for forming anitride semiconductor crystal layer 10 using crystal growth through abuffer layer 52, and therefore the surface of the substrate 50 forcrystal growth side of the nitride semiconductor crystal layer 10 can bea −c surface. Furthermore, after adhesively fixing the nitridesemiconductor crystal layer 10 and the glass substrate 14 through theadhesive layer 12, the substrate 50 for crystal growth and the bufferlayer 52 are removed, so the −c surface of the nitride semiconductorcrystal layer 10 can be the second surface 102 which is the topmostlayer.

The effect of making the topmost layer of the nitride semiconductorcrystal layer 10 or in other words the second surface 102 (surface whichemits photoelectrons) to be the −c surface will be described whilereferring to FIG. 4 and FIG. 5. FIG. 4 is a bandgap diagram for aphotoelectric surface, and the broken line shows the case where thetopmost layer is the +c surface, and the solid line shows the case wherethe topmost layer is the −c surface. Generally, the surface energy bandof a p type semiconductor curve downward. To this is added the effect ofspontaneous polarization and piezo polarization. This polarizationeffect is reversed depending on whether the surface is the +c surface orthe −c surface, and the latter case acts effectively. In other words, ifthe N surface (−c surface) is the electron emission plane, the polaritydirection will change from bulk towards the emission plane with bothpolarizations (spontaneous polarization and piezo polarization) (fixedelectric charge of the polarity but the emission plane side ispositive). In order to block this, the density of the acceptors whichundergo electron disassociation near the surface is increased, thedepletion layer is widened, and the downward facing curve effect willincrease as shown by the solid line in FIG. 4. As a result, the vacuumlevel will be lowered by that amount so the photoelectrons can moreeasily escape and the quantum efficiency of the photoelectric surfacewill be increased. Furthermore, because of the widening of the depletionlayer, a built-in field will be formed in the nitride semiconductorcrystal layer, and the diffusion length will increase (d₁ and d₂ in FIG.4). Therefore, electrons in the deep location can reach the surface andescape. As shown in FIG. 5, the energy distribution propertiesdetermined from the relationship of the electron current to the appliedvoltage show that the high-energy component of the −cGaN is higher thanthat of +cGaN, and the acceleration effect due to polarization is alsoshown. As a result, electrons which have energy above the vacuum level(V.L.) of the surface are increased, and the number of photoelectronswhich can escape will be higher.

1-7. (canceled)
 8. A photoelectric surface member manufacturing methodof manufacturing a photoelectric surface member for forming aphotoelectric surface which emits photoelectrons excited by incidentlight, comprising the steps of: preparing a substrate for crystal growthwhich is a crystalline substance with the main surface in apredetermined plane orientation; forming a buffer layer along the mainsurface of said substrate for crystal growth; forming a nitridesemiconductor crystal layer as a light absorbing layer on said bufferlayer by crystal growth in the Group III element surface (positive cpolar) direction using a Group III-V nitride type semiconductor materialso that a surface of the nitride semiconductor crystal layer of thebuffer layer side is a second surface which is a negative c polarsurface; forming an adhesive layer on a first surface which is apositive c polar surface of said nitride semiconductor crystal layer;adhesively fixing a glass substrate which is formed to transmit incidentlight onto said adhesive layer; removing said substrate for crystalgrowth to obtain said buffer layer; removing said buffer layer to obtainsaid nitride semiconductor crystal layer having the second surface whichis the negative c polar surface after the step of removing saidsubstrate for crystal growth; and forming a layer containing alkalimetal on the second surface of said nitride semiconductor crystal layer,wherein in said nitride semiconductor crystal layer, the first surfaceis an incidence surface where the light transmitted through the glasssubstrate enters, and the second surface is an emission surface whichemits photoelectrons excited by the incident light through the layercontaining alkali metal.
 9. The manufacturing method according to claim8, further comprising, prior to the step of removing the substrate forcrystal growth, a step of forming a protective layer which covers atleast the periphery of said glass substrate.
 10. The manufacturingmethod according to claim 8, wherein the substrate for crystal growth isa Si substrate with the predetermined plane orientation.
 11. Themanufacturing method according to claim 10, wherein the buffer layer isan AlN layer, or an AlN/GaN superlattice layer.
 12. The manufacturingmethod according to claim 8, wherein the substrate for crystal growth isa GaAs substrate with the predetermined plane orientation.
 13. Themanufacturing method according to claim 12, wherein the buffer layer isan InGaAsN layer.
 14. The manufacturing method according to claim 8,wherein the substrate for crystal growth is a GaP substrate with thepredetermined plane orientation.
 15. The manufacturing method accordingto claim 14, wherein the buffer layer is an InGaPN layer.
 16. Themanufacturing method according to claim 8, wherein the nitridesemiconductor crystal layer is a GaN layer, an AlGaN layer, or an InGaNlayer.
 17. The manufacturing method according to claim 8, furthercomprising, after the step of forming the nitride semiconductor crystallayer, a step of forming an electron stopping layer with a bandgaplarger than that of the nitride semiconductor crystal layer.
 18. Themanufacturing method according to claim 17, wherein the electronstopping layer is an AlN layer, an AlGaN layer, or a BGaN layer.